US20240180040
2024-05-30
Electricity
H10N30/1071
An acoustic transistor utilizes an acoustic signal to control a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by generating charge through a piezoelectric material. Instead of relying on a traditional gate voltage, the transistor is activated by sound waves that stimulate a piezoelectric film, creating a conducting path at the silicon/gate oxide interface. This innovative approach significantly reduces power consumption in electronic devices by eliminating or minimizing the need for gate voltage.
The acoustic transistor consists of a source region, drain region, and a gate region made from silicon oxide. The gate incorporates metal layers and a piezoelectric film positioned between them. An acoustic signal generator stimulates the piezoelectric film, producing acoustic waves that induce electric charge across the gate dielectric. This charge accumulation turns the transistor on or off, enabling efficient switching without excessive power usage.
The primary benefit of using an acoustic transistor is the reduction in energy consumption, especially important in integrated circuits (ICs) containing billions of transistors. By eliminating the need for continuous gate signals, this technology decreases overall power usage and thermal output. Additionally, it allows for simultaneous control of multiple transistors using a single acoustic signal, further enhancing efficiency.
Acoustic transistors can be applied in various semiconductor technologies, including FinFETs and Gate-all-around FETs (GAAFETs). They are particularly beneficial in dynamic random access memory (DRAM), where they can charge capacitors using acoustic waves while controlling their discharge through selective transistor activation. This dual functionality leads to lower energy consumption in memory devices.
The design of acoustic transistors allows for scalability in integrated circuits, enabling control over numerous transistors simultaneously with minimal energy input. The use of advanced piezoelectric materials like Hafnium Silicate enhances performance by reducing leakage currents and improving charge generation. As semiconductor technology progresses, these devices hold promise for developing more energy-efficient electronic systems across various applications.