Invention Title:

GIANT SECOND HARMONIC GENERATION IN BULK MONOLAYER MOS2 THIN FILMS

Publication number:

US20250306431

Publication date:
Section:

Physics

Class:

G02F1/37

Inventors:

Assignee:

Applicant:

Smart overview of the Invention

The patent application discusses a novel bulk monolayer MoS2 (BM-MoS2) thin film designed for highly efficient second harmonic generation (SHG). This material comprises alternating layers of monolayer MoS2 atomic crystals and organic molecular layers, which maintain the unique properties of monolayer MoS2 while enhancing its optical cross-sections. The BM-MoS2 thin films exhibit an SHG efficiency 126 times greater than that of monolayer MoS2 and 21 times greater than single crystalline GaAs, a leading material for nonlinear optical applications.

Technical Field and Background

The development falls within the field of thin film materials, focusing on those used for SHG, a nonlinear optical process crucial for various applications such as frequency conversion and optical microscopy. Traditional materials often struggle with low nonlinear optical susceptibility or integration difficulties. Monolayer MoS2, with its noncentrosymmetry and high second-order NLO susceptibility, presents a promising alternative but is limited by its atomic thinness and subsequent light-matter interaction inefficiency.

Summary of Invention

The invention outlines a solution-processible MoS2 thin film that combines monolayer MoS2 crystals with organic spacers to form a superlattice structure. This design preserves the monolayer's nonlinear optical properties while significantly increasing the material's optical cross-section. The BM-MoS2 thin films can be synthesized using scalable methods like spin-coating, spray-coating, and inkjet-printing, offering significant enhancements in SHG efficiency compared to existing materials.

Advantages

  • Scalable Synthesis: The method allows for rapid, large-scale production of BM-MoS2 thin films with adjustable thickness using various coating techniques.
  • Enhanced SHG Efficiency: The BM-MoS2 films demonstrate SHG efficiency enhancements up to 126 times that of monolayer MoS2 and 21 times that of GaAs wafers.
  • Facile Integration: These films can be easily integrated with various photonic platforms, expanding their potential applications in optics.
  • Stability: Organic spacers enhance the stability of BM-MoS2 films against moisture and oxygen diffusion, maintaining performance under challenging conditions.

Detailed Description

The detailed description covers the preparation process and integration possibilities of BM-MoS2 thin films. It emphasizes their potential to overcome limitations faced by traditional materials in nonlinear optics. The invention leverages known components where applicable to facilitate implementation while allowing for flexibility in embodiment variations. This approach ensures that the technology can adapt to both current and future advancements in the field.