US20250362606
2025-11-27
Physics
G03F7/0392
The patent application describes a method for forming semiconductor devices using a specialized photoresist layer. This photoresist layer, which is applied over a substrate, is exposed to radiation to create a specific pattern. The unexposed portions of the layer are then selectively removed, leaving behind a patterned photoresist layer. The composition of this photoresist includes a fluorine-containing polymer, a crosslinker, and a photoactive compound.
The semiconductor integrated circuit (IC) industry has seen rapid growth due to technological advancements in materials and design. Each new generation of ICs features smaller and more complex circuits than its predecessors. This miniaturization increases functional density, leading to more efficient production and reduced costs. However, it also complicates the manufacturing processes for ICs.
Various embodiments and examples are provided to illustrate the implementation of different features of this technology. These examples are meant to simplify the disclosure but are not limiting. The patent discusses the potential for different configurations and arrangements, including the possibility of additional features being introduced between existing ones. Spatial terms are used for descriptive purposes and may vary depending on device orientation.
The document defines several chemical terms used throughout the application. For instance:
The patent also defines various other chemical groups that include heteroatoms or specific structural features: