SELF-SELECTING MEMORY MATERIAL, MEMORY DEVICE, AND ELECTRONIC DEVICE INCLUDING THE MEMORY DEVICE

Smart overview of the Invention

A new self-selecting memory (SSM) material is introduced, which exhibits ovonic threshold switching (OTS) characteristics. This material is capable of altering its threshold voltage based on the polarity and intensity of the applied voltage. The composition primarily includes germanium (Ge), antimony (Sb), and sulfur (S). This advancement is particularly significant in the context of developing more compact and efficient memory devices, which are in high demand due to the trend towards lightweight and thin electronic products.

Background

The development of highly integrated memory devices is critical as electronic products evolve. Traditional memory devices often use a cross-point structure where word lines and bit lines intersect, with memory cells located at these intersections. Typically, these cells include a two-terminal selector and a memory component to manage sneak currents between adjacent cells. However, the innovation of SSM devices integrates both the selector and memory functions into a single unit, thereby reducing the size and complexity of memory devices.

Material Composition

The SSM material's composition is crucial for its function. The Ge content ranges from 20% to 40%, while Sb content ranges from 10% to 40%. The material may also include elements like nitrogen (N), indium (In), gallium (Ga), aluminum (Al), or silicon (Si) in amounts up to 10%. Notably, arsenic (As) is excluded from this composition. These specific compositions allow the SSM material to exhibit desired electrical characteristics, such as a significant difference between set and reset threshold voltages.

Memory Device Structure

The memory device comprises two electrodes with a memory layer in between that exhibits OTS characteristics. This layer can switch between different states by applying positive or negative bias voltages, effectively altering its threshold voltage. The device structure allows for vertical integration, where bit lines and word lines intersect perpendicularly, optimizing space and efficiency. This configuration supports the miniaturization trend in electronic components while maintaining performance.

Applications in Electronic Devices

Incorporating this SSM material into electronic devices enhances their functionality by enabling more efficient memory management. The electronic device includes a memory controller that interfaces with the memory layer, utilizing its ability to change states based on applied voltages. This integration supports advanced data storage solutions in cutting-edge electronics, aligning with industry trends towards more compact and powerful devices.