SEMICONDUCTOR DEVICE INCLUDING MULTI-BRIDGE CHANNEL FIELD EFFECT TRANSISTOR

Smart overview of the Invention

The semiconductor device discussed is characterized by its inclusion of a multi-bridge channel field effect transistor (MBCFET™). This device aims to enhance the electrical connection reliability between the source/drain contact and the upper source/drain region. The structure features a substrate with an active pattern extending horizontally, and multiple nanosheets stacked vertically. These nanosheets are separated into two groups, each with its own gate electrode extending in a direction different from the active pattern.

Structural Details

The device architecture includes a first and second set of upper nanosheets stacked vertically on an active pattern. These are spaced apart in the horizontal direction and are surrounded by first and second gate electrodes, respectively. A source/drain region is situated between these nanosheet groups, with a contact extending into this region. This configuration allows for improved electrical coupling and facilitates effective scaling of integrated circuits.

Functional Advantages

The multi-gate transistor design employed in this semiconductor device offers several advantages. It provides improved current control without necessitating an increase in gate length. Additionally, the design helps suppress short channel effects (SCE), where the channel region's potential is influenced by the drain voltage. This makes the device suitable for high-density integrated circuits by leveraging a three-dimensional channel structure.

Material and Layer Specifications

The upper source/drain region consists of three layers: a first layer in contact with the nanosheets' sidewalls, a second layer below it, and a third layer above, made of the same material as the second. The thickness of the first layer tapers toward the source/drain contact, optimizing the device's electrical performance. The design also includes a nanosheet separating layer, adding to the device's structural integrity.

Flexibility and Modifications

While specific embodiments and configurations are detailed, the design is flexible, allowing for various modifications without departing from the core principles. The description acknowledges that those skilled in the art may implement changes to adapt the device to different applications or requirements, ensuring its broad applicability within the semiconductor field.