STRETCHABLE THIN FILM TRANSISTOR, STRETCHABLE PANEL, AND ELECTRONIC DEVICE

Smart overview of the Invention

The patent application introduces a stretchable thin film transistor (TFT), a stretchable panel, and an electronic device incorporating these technologies. The TFT comprises a gate electrode, a semiconductor layer overlapping the gate electrode, a gate insulating layer positioned between them, and source and drain electrodes connected to the semiconductor layer. The semiconductor layer is composed of a chalcogen-containing two-dimensional semiconductor material combined with a substituted or unsubstituted aryl chalcogenol or its derivative.

Technological Background

Recent advancements focus on stretchable panels, such as display panels that can be bent or wearable sensor arrays for dynamic environments. These panels must be stretchable to accommodate movements or changes in shape while maintaining flexibility. The disclosed technology aims to enhance these panels' stretchability without compromising electrical performance.

Structural Composition

The semiconductor layer features a metal chalcogenide nanoflake, which may include metals like Mo, W, or combinations thereof, and chalcogens like S, Se, or Te. The aryl chalcogenol component may chemically bond with the nanoflakes, enhancing the structural integrity and performance of the TFT. This bonding is facilitated by a shared chalcogen element, ensuring the semiconductor layer's flexibility and durability.

Panel and Device Integration

The stretchable panel comprises a flexible substrate with a TFT array, offering independent control over each pixel or subpixel. It may include regions of varying elasticity, with non-stretchable patterns for enhanced mechanical properties. The panel can integrate unit elements such as LEDs or photoelectric diodes, suitable for use in stretchable displays or sensor arrays.

Material and Design Considerations

Materials used in the stretchable TFT include microcrack metals, conductive polymers, and various polymers for the insulating layers, ensuring adaptability and resilience. The design allows for ultra-thin semiconductor layers to maintain flexibility and prevent performance degradation, making the technology suitable for advanced electronic devices requiring dynamic form factors.