US20260104244
2026-04-16
Physics
G01B9/02058
A shape profile measurement device is designed to enhance the precision of measuring semiconductor devices, particularly those with vertical structures. As semiconductor integration increases, there is a growing need for accurate measurement methods due to the complexity of vertically stacked layers. The device utilizes a light source, a relay optical system, and a detector to measure the shape profile of a target by analyzing light signals reflected from different surfaces of the target.
The device comprises several key components: a light source that emits a light signal, a relay optical system that performs axial chromatic aberration on the light signal, and a detector that identifies the wavelength of the reflected light signal. The relay optical system emits chromatically dispersed light across multiple wavelengths to the measurement target, focusing the light at various positions along the optical axis. The processor then calculates the shape profile based on the focal position of the reflected light's wavelength.
The measurement process involves placing a target on a stage, where the target has a patterned front surface and a flat back surface. The device emits a chromatically dispersed light signal from the back to the front surface of the target. By detecting wavelengths reflected from both surfaces, the device calculates the surface profile of the front surface. This method allows for precise measurement of the target's three-dimensional shape profile.
The light source, which may include a femtosecond laser or other high-coherence lasers, emits a light signal with a wavelength band that ensures high transmittance through the target. The relay optical system includes an axial chromatic aberration generator that spatially disperses the light signal into different wavelengths, each focusing at distinct positions along the optical axis. This setup facilitates the generation and analysis of interference signals from the target.
This measurement device is particularly beneficial for the semiconductor industry, where accurate profiling of complex device structures is essential. By utilizing high-transmittance light signals and advanced optical systems, the device improves the reliability and precision of shape measurements. This advancement supports the development of more integrated and efficient semiconductor devices, addressing the challenges posed by increased vertical integration.