CAPACITOR INCLUDING DIELECTRIC LAYER INCLUDING HIGH-K MATERIAL, ELECTRONIC DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR

Smart overview of the Invention

A novel capacitor design features a dielectric layer composed of high-k material, improving performance in electronic devices. The capacitor comprises a first electrode, a second electrode, and a dielectric layer situated between them. Additionally, a conductive interface layer is positioned between the first electrode and the dielectric layer. The dielectric material possesses a rutile crystalline phase, which is key to the capacitor's enhanced properties.

Dielectric Layer Composition

The dielectric layer is structured with two intermediate layers. The first intermediate layer contains an oxide of metals like aluminum, gallium, or yttrium, which exhibit p-type characteristics. The second intermediate layer includes oxides of Group IV metals, such as germanium or silicon, also maintaining a rutile crystalline phase. This composition aims to boost the dielectric constant while minimizing leakage currents.

Conductive Interface Layer

The conductive interface layer is divided into two sub-layers. The first conductive interface layer is made of molybdenum oxide doped with tin, possessing a stable crystal structure. The second layer may include materials like tin oxide or germanium oxide. This dual-layer design facilitates a higher conduction band offset, contributing to improved capacitor efficiency.

Applications in Electronic Devices

This capacitor is integrated into electronic devices, such as those containing transistors, enhancing their electrical performance. The dielectric layer's composition, including a mix of titanium oxide and other metal oxides, is critical in maintaining device efficiency as components continue to miniaturize. The design addresses the challenge of maintaining capacitance in smaller devices.

Manufacturing Method

The manufacturing process involves sequentially forming the conductive interface layer, the dielectric layer, and the second electrode. The dielectric layer comprises a combination of metal oxides, with titanium oxide as a primary component. This method ensures the precise layering necessary for optimal capacitor performance, enabling integration into advanced electronic devices.